| PART |
Description |
Maker |
| HMC838LP6CE |
FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz
|
Hittite Microwave Corporation
|
| MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF210 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MRF21120 |
MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
| MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3 |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| GSX-852/3C1E315.36MHZ GSX-852/5C1D320.945MHZ |
QUARTZ CRYSTAL RESONATOR, 15.36 MHz
QUARTZ CRYSTAL RESONATOR, 20.945 MHz
|
GOLLEDGE ELECTRONICS LTD
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MHW9236 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF9210R3 |
880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
| MRF6S19060N |
1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF21060 |
MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF6S21100H MOTOROLAINC-MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA Lateral N?Channel RF Power MOSFET
|
Motorola
|
| MRF6P9220HR3 |
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
|
